Determination of gain for eddy current sensor

ABSTRACT

A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.

TECHNICAL FIELD

The present disclosure relates to chemical mechanical polishing and morespecifically to monitoring of a conductive layer during chemicalmechanical polishing.

BACKGROUND

An integrated circuit is typically formed on a substrate by thesequential deposition of conductive, semiconductive, or insulativelayers on a silicon wafer. A variety of fabrication processes requireplanarization of a layer on the substrate. For example, one fabricationstep involves depositing a filler layer over a non-planar surface andplanarizing the filler layer. For certain applications, the filler layeris planarized until the top surface of a patterned layer is exposed. Forexample, a metal layer can be deposited on a patterned insulative layerto fill the trenches and holes in the insulative layer. Afterplanarization, the remaining portions of the metal in the trenches andholes of the patterned layer form vias, plugs, and lines provideconductive paths between thin film circuits on the substrate.

Chemical mechanical polishing (CMP) is one accepted method ofplanarization. This planarization method typically requires that thesubstrate be mounted on a carrier head. The exposed surface of thesubstrate is typically placed against a rotating polishing pad. Thecarrier head provides a controllable load on the substrate to push itagainst the polishing pad. Polishing slurry with abrasive particles istypically supplied to the surface of the polishing pad.

One problem in CMP is determining whether the polishing process iscomplete, i.e., whether a substrate layer has been planarized to adesired flatness or thickness, or when a desired amount of material hasbeen removed. Variations in the slurry composition, the polishing padcondition, the relative speed between the polishing pad and thesubstrate, the initial thickness of the substrate layer, and the load onthe substrate can cause variations in the material removal rate. Thesevariations cause variations in the time needed to reach the polishingendpoint. Therefore, determining the polishing endpoint merely as afunction of polishing time can lead to non-uniformity within a wafer orfrom wafer to wafer.

In some systems, a substrate is monitored in-situ during polishing,e.g., through the polishing pad. One monitoring technique is to inducean eddy current in the conductive layer and detect the change in theeddy current as the conductive layer is removed.

SUMMARY

In one aspect, a method of controlling polishing includes receiving ameasurement of an initial thickness of a conductive film on a firstsubstrate prior to polishing the first substrate from an in-line orstand-alone monitoring system, polishing one or more substrates in apolishing system, the one or more substrates including the firstsubstrate, during polishing of the one or more substrates, monitoringthe one or more substrates with an eddy current monitoring system togenerate a first signal, determining a starting value of the firstsignal for a start of polishing of the first substrate, determining again based on the starting value and the measurement of the initialthickness, for at least a portion of the first signal collected duringpolishing of at least one substrate of the one or more substrates,calculating a second signal based on the first signal and the gain, anddetermining at least one of a polishing endpoint or an adjustment to apolishing parameter for the at least one of the substrate based on thesecond signal.

Implementations may include one or more of the following features.

Calculating the second signal may include multiplying by the gain.

Calculating the second signal may include calculating V′=V*G+K whereinV′ is the second signal, V is the first signal, G is the gain and K isan offset.

The at least one substrate of the one or more substrates may be thefirst substrate.

The at least one substrate of the one or more substrates may be a secondsubstrate polished subsequent to the first substrate.

The polishing system may include a rotatable platen, and an eddy currentsensor of the eddy current monitoring system is supported on the platento sweep across the one or more substrates.

The first signal may be generated from a portion of a signal generatedwhen the eddy current sensor is not adjacent the substrate.

A reference value may be determined from a portion of the signalgenerated when the eddy current sensor is not adjacent the substrate.

An offset may be generated by adjusting the reference value to generatea desired value for zero thickness.

Determining the gain may include determining a desired value from acalibration function relating thickness to signal strength and themeasurement of the initial thickness.

Determining the gain may include calculating a multiplier N according to

$N = \frac{\left( {D - K} \right)}{\left( {S - K} \right)}$

where D is the desired value, S is the starting value, and K is aconstant representing a value of the calibration function for zerothickness.

Determining the gain may include multiplying an old gain by N.

Determining the starting value may include generating a sequence ofmeasured values from the first signal, fitting a function to thesequence of measured values, and calculating the starting value as avalue of the function at an approximate start time of the polishingoperation.

In another aspect, a computer program product, tangibly encoded on anon-transitory computer readable media, includes instructions operableto cause a data processing apparatus to perform operations to carry outany of the above methods.

In another aspect, a polishing system includes a rotatable platen tosupport a polishing pad, a carrier head to hold a first substrateagainst the polishing pad, an in-situ eddy current monitoring systemincluding a sensor to generate a first signal depending on a thicknessof a conductive layer on the substrate, and a controller configuredcarry out any of the above methods.

In another aspect, a method of controlling polishing includes polishinga substrate at a first polishing station, during polishing of thesubstrate at the first polishing station, monitoring the substrate witha first eddy current monitoring system to generate a first signal,determining an ending value of the first signal for an end of polishingof the substrate at the first polishing station, determining a firsttemperature at the first polishing station, after polishing thesubstrate at the first polishing station, polishing the substrate at asecond polishing station, during polishing of the substrate at thesecond polishing station, monitoring the substrate with a second eddycurrent monitoring system to generate a second signal, determining astarting value of the second signal for a start of polishing of thesubstrate at the second polishing station, determining a gain for thesecond polishing station based on the ending value, the starting valueand the first temperature, for at least a portion of the second signalcollected during polishing of at least one substrate at the secondpolishing station, calculating a third signal based on the second signaland the gain, and determining at least one of a polishing endpoint or anadjustment to a polishing parameter for the at least one substrate basedon the third signal.

Implementations may include one or more of the following features.

Determining the gain for the second polishing station may furtherincludes measuring a second temperature at the second polishing station.

The gain may be calculated based on the resistivity of a layer beingpolished at first and second temperatures.

[1+alpha(TE_(post)−TE_(ini))] may be calculated, where TE_(post) is thefirst temperature at the first polishing pad, TE_(ini) is the secondtemperature at the second polishing pad, and alpha is a resistivityfactor for a material of layer being polished.

An ending value of the first signal for an end of polishing of thesubstrate at the first polishing station may be determined.

Determining the ending value may include generating a first sequence ofmeasured values from the first signal, fitting a first function to thefirst sequence of measured values, and calculating the ending value as avalue of the function at an endpoint time for polishing at the firstpolishing station.

A first thickness may be determined from the ending value and acalibration function relating thickness to signal strength.

An adjusted thickness may be determined based on the first thickness,the first temperature and the second temperature.

Determining the adjusted thickness may include multiplying the firstthickness by [1+alpha(TE_(post)−TE_(ini))] where TE_(post) is the firsttemperature at the first polishing pad, TE_(ini) is the secondtemperature at the second polishing pad, and alpha is a resistivityfactor for a material of layer being polished.

A desired value may be determined from the adjusted value and thecalibration function.

A starting value of the second signal for a start of polishing of thesubstrate at the second polishing station may be determined.

Determining the starting value may include generating a second sequenceof measured values from the second signal, fitting a second function tothe second sequence of measured values, and calculating the startingvalue as a value of the second function at an approximate start time ofpolishing at the second polishing station.

Determining the gain may include calculating a multiplier N according to

$N = \frac{\left( {D - K} \right)}{\left( {S - K} \right)}$

where D is the desired value, S is the starting value, and K is aconstant representing a value of the calibration function for zerothickness.

The first temperature may be a temperature of a first polishing pad atthe first polishing station and the second temperature may be atemperature of a second polishing pad at the second polishing station.

The first temperature may be a temperature of a layer being polished atthe first polishing station and the second temperature may be atemperature of the layer being polished at the second polishing station.

In another aspect, a computer program product, tangibly encoded on anon-transitory computer readable media, operable to cause a dataprocessing apparatus to perform operations to carry out any of the abovemethods.

In another aspect, a polishing system include a first polishing stationincluding a first platen to support a first polishing pad, a firstin-situ eddy current monitoring system including a first sensor togenerate a first signal depending on a thickness of a conductive layeron a substrate, and a first temperature sensor, a second polishingstation including a second platen to support a second polishing pad anda second in-situ eddy current monitoring system including a secondsensor to generate a second signal depending on the thickness of theconductive layer on the substrate, a carrier head to hold the substrate,and a controller configured carry out any of the above methods.

Implementations may include one or more of the following advantages.Gain and offset of the monitoring system can be adjusted automaticallyto compensate for the parameters that can affect the eddy currentsignal. For example gain and offset can be adjusted for changes in theenvironmental conditions (e.g., temperature) or equipment parameterssuch as the thickness of the polishing pad. Reliability of the endpointsystem to detect a desired polishing endpoint can be improved, andwithin-wafer and wafer-to-wafer thickness non-uniformity can be reduced.

The details of one or more implementations are set forth in theaccompanying drawings and the description below. Other aspects,features, and advantages will be apparent from the description anddrawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-sectional view of an example of a polishingstation including an eddy current monitoring system.

FIG. 2 illustrates a cross-sectional view of an example magnetic fieldgenerated by eddy current sensor.

FIG. 3 illustrates a top view of an example chemical mechanicalpolishing station showing a path of a sensor scan across a wafer.

FIG. 4 illustrates a graph of an example eddy current phase signal as afunction of conductive layer thickness

FIG. 5 illustrates a graph of an example trace from the eddy currentmonitoring system.

FIG. 6 is a flow graph for the start of a polishing operation of asubstrate in a polishing station.

FIG. 7 is a flow graph for transferring a substrate from a firstpolishing station to a second polishing station.

Like reference numbers and designations in the various drawings indicatelike elements.

DETAILED DESCRIPTION

One monitoring technique for controlling a polishing operation is to usean alternating current (AC) drive signal to induce eddy currents in aconductive layer on a substrate. The induced eddy currents can bemeasured by an eddy current sensor in-situ during polishing to generatea signal. Assuming the outermost layer undergoing polishing is aconductive layer, then the signal from the sensor should be dependent onthe thickness of the layer.

Different implementations of eddy current monitoring systems may usedifferent aspects of the signal obtained from the sensor. For example,the amplitude of the signal can be a function of the thickness of theconductive layer being polished. Additionally, a phase differencebetween the AC drive signal and the signal from the sensor can be afunction of the thickness of the conductive layer being polished.

Due to composition and assembly variations, eddy current sensors canexhibit different gains and offsets when measuring the eddy current. Theeddy current can also be affected by variations in the environmentalparameters, e.g., the temperature of the substrate during polishing. Runtime variations such as pad wear or variations of the pressure exertedon the polishing pad (e.g., in an in-situ monitoring system) can changethe distance between the eddy current sensor and the substrate and canalso affect the measured eddy current signal. Therefore, calibration ofthe eddy current monitoring system may be performed to compensate forthese variations.

FIG. 1 illustrates an example of a polishing station 22 of a chemicalmechanical polishing apparatus. The polishing station 22 includes arotatable disk-shaped platen 24 on which a polishing pad 30 is situated.The platen 24 is operable to rotate about an axis 25. For example, amotor 21 can turn a drive shaft 28 to rotate the platen 24. Thepolishing pad 30 can be a two-layer polishing pad with an outer layer 34and a softer backing layer 32.

The polishing station 22 can include a supply port or a combinedsupply-rinse arm 39 to dispense polishing liquid 38, such as slurry,onto the polishing pad 30.

The carrier head 70 is operable to hold a substrate 10 against thepolishing pad 30. The carrier head 70 is suspended from a supportstructure 60, e.g., a carousel or a track, and is connected by a driveshaft 74 to a carrier head rotation motor 76 so that the carrier headcan rotate about an axis 71. Optionally, the carrier head 70 canoscillate laterally, e.g., on sliders on the carousel or track 60; or byrotational oscillation of the carousel itself. In operation, the platenis rotated about its central axis 25, and the carrier head is rotatedabout its central axis 71 and translated laterally across the topsurface of the polishing pad 30. Where there are multiple carrier heads,each carrier head 70 can have independent control of its polishingparameters, for example each carrier head can independently control thepressure applied to each respective substrate.

The carrier head 70 can include a retaining ring 84 to hold thesubstrate. In some implementations, the retaining ring 84 may include ahighly conductive portion, e.g., the carrier ring can include a thinlower plastic portion 86 that contacts the polishing pad, and a thickupper conductive portion 88. In some implementations, the highlyconductive portion is a metal, e.g., the same metal as the layer beingpolished, e.g., copper.

A recess 26 is formed in the platen 24, and a thin section 36 can beformed in the polishing pad 30 overlying the recess 26. The recess 26and thin pad section 36 can be positioned such that regardless of thetranslational position of the carrier head they pass beneath substrate10 during a portion of the platen rotation. Assuming that the polishingpad 30 is a two-layer pad, the thin pad section 36 can be constructed byremoving a portion of the backing layer 32.

The polishing station 22 can include a pad conditioner apparatus with aconditioning disk 31 to maintain the condition of the polishing pad.

In some implementations, the polishing station 22 includes a temperaturesensor 64 to monitor a temperature in the system. Although illustratedin FIG. 1 as positioned to monitor the temperature of the polishing pad30 and/or slurry 38 on the pad 30, the temperature sensor 64 could bepositioned inside the carrier head to measure the temperature of thesubstrate 10.

The polishing station may include an in-situ monitoring system 40. Thein-situ monitoring system 40 generates a time-varying sequence of valuesthat depend on the thickness of a layer on the substrate 10. Inparticular, the in-situ monitoring system 40 can be an eddy currentmonitoring system. Similar eddy current monitoring systems are describedin U.S. Pat. Nos. 6,924,641, 7,112,960 and 7,016,795, the entiredisclosures of which are incorporated herein by reference.

In some implementations, a polishing apparatus includes additionalpolishing stations. For example, a polishing apparatus can include twoor three polishing stations. For example, the polishing apparatus caninclude a first polishing station with a first eddy current monitoringsystem and a second polishing station with a second eddy currentmonitoring system.

For example, in operation, bulk polishing of the conductive layer on thesubstrate can be performed at the first polishing station, and polishingcan be halted when a target thickness of the conductive layer remains onthe substrate. The substrate is then transferred to the second polishingstation, and the substrate can be polished until an underlying layer,e.g., a patterned dielectric layer.

FIG. 2 illustrates a cross sectional view of an example magnetic field48 generated by an eddy current sensor 49. The eddy current sensor 49can be positioned at least partially in the recess 26 (see FIG. 1). Insome implementations, the eddy current sensor 49 includes a core 42having two poles 42 a and 42 b and a drive coil 44. The magnetic core 42can receive an AC current in the drive coil 44 and can generate amagnetic field 48 between the poles 42 a and 42 b. The generatedmagnetic field 48 can extend through the thin pad section 36 and intothe substrate 10. A sense coil 46 generates a signal that depends on theeddy current induced in a conductive layer 12 of the substrate 10.

FIG. 3 illustrates a top view of the platen 24. As the platen 24rotates, the sensor 49 sweeps below the substrate 10. By sampling thesignal from the sensor at a particular frequency, the sensor 49generates measurements at a sequence of sampling zones 96 across thesubstrate 10. For each sweep, measurements at one or more of thesampling zones 96 can be selected or combined. Thus, over multiplesweeps, the selected or combined measurements provide the time-varyingsequence of values. In addition, off-wafer measurements may be performedat the locations where the sensor 49 is not positioned under thesubstrate 10.

Referring back to FIGS. 1 and 2, in operation, an oscillator 50 iscoupled to drive coil 44 and controls drive coil 44 to generate anoscillating magnetic field 48 that extends through the body of the core42 and into the gap between the two magnetic poles 42 a and 42 b of thecore 42. At least a portion of magnetic field 48 extends through thethin pad section 36 of the polishing pad 30 and into substrate 10.

If a conductive layer 12, e.g., a metal layer, is present on thesubstrate 10, the oscillating magnetic field 48 can generate eddycurrents in the conductive layer. The generated eddy currents can bedetected by the sense coil 46.

As the polishing progresses, material is removed from the conductivelayer 12, making the conductive layer 12 thinner and thus increasing theresistance of the conductive layer 12. Therefore, the eddy currentinduced in the layer 12 changes as the polishing progresses.Consequently, the signal from the eddy current sensor changes as theconductive layer 12 is polished. FIG. 4 shows a graph 400 thatillustrates a relationship between conductive layer thickness and thesignal from the eddy current monitoring system 40.

In some implementations, the eddy current monitoring system 40 outputs asignal that is proportional to the amplitude of the current flowing inthe sense coil 46. In some implementations, the eddy current monitoringsystem 40 outputs a signal that is proportional to the phase differencebetween the current flowing in the drive coil 44 and the current flowingin the sense coil 46.

The polishing station 22 can also include a position sensor 80, such asan optical interrupter, to sense when the eddy current sensor 49 isunderneath the substrate 10 and when the eddy current sensor 49 is offthe substrate. For example, the position sensor 80 can be mounted at afixed location opposite the carrier head 70. A flag 82 can be attachedto the periphery of the platen 24. The point of attachment and length ofthe flag 82 is selected so that it can signal the position sensor 80when the core 42 sweeps underneath the substrate 10.

Alternately, the polishing station 22 can include an encoder todetermine the angular position of the platen 24. The eddy current sensorcan sweep underneath the substrate with each rotation of the platen.

In operation, the polishing station 22 uses the monitoring system 40 todetermine when the bulk of the filler layer has been removed and/or anunderlying stop layer has been exposed. The in-situ monitoring system 40can be used to determine the amount of material removed from the surfaceof the substrate.

Returning back to FIGS. 1 and 3, a general purpose programmable digitalcomputer 90 can be connected to a sensing circuitry 94 that can receivethe eddy current signals. Computer 90 can be programmed to sample theeddy current signal when the substrate generally overlies the eddycurrent sensor 49, to store the sampled signals, and to apply theendpoint detection logic to the stored signals and detect a polishingendpoint and/or to calculate adjustments to the polishing parameters,e.g., changes to the pressure applied by the carrier head, to improvepolishing uniformity. Possible endpoint criteria for the detector logicinclude local minima or maxima, changes in slope, threshold values inamplitude or slope, or combinations thereof.

Components of the eddy current monitoring system other than the coilsand core, e.g., the oscillator 50 and sensing circuitry 94, can belocated apart from the platen 24, and can be coupled to the componentsin the platen through a rotary electrical union 29, or can be installedin the platen and communicate with the computer 90 outside the platenthrough the rotary electrical union 29.

In addition, computer 90 can also be programmed to measure the eddycurrent signal from each sweep of the eddy current sensor 49 underneaththe substrate at a sampling frequency to generate a sequence ofmeasurements for a plurality of sampling zones 96, to calculate theradial position of each sampling zone, to divide the amplitudemeasurements into a plurality of radial ranges, to and to use themeasurements from one or more radial ranges to determine the polishingendpoint and/or to calculate adjustments to the polishing parameter.

Since the eddy current sensor 49 sweeps underneath the substrate 10 witheach rotation of the platen, information on the conductive layerthickness is being accumulated in-situ and on a continuous real-timebasis. During polishing, the measurements from the eddy current sensor49 can be displayed on an output device 92 to permit an operator of thepolishing station 22 to visually monitor the progress of the polishingoperation. By arranging the measurements into radial ranges, the data onthe conductive film thickness of each radial range can be fed into acontroller (e.g., computer 90) to adjust the polishing pressure profileapplied by a carrier head.

In some implementations, the controller may use the eddy current signalsto trigger a change in polishing parameters. For example, the controllermay change the slurry composition.

FIG. 5 shows a trace 500 generated by an eddy current monitoring system.As noted above, the signal can be sampled to generate one or moremeasurements 510 for each scan of the sensor across the substrate. Thus,over multiple scans, the eddy current monitoring system generates asequence of measured values 510. This sequence of measured values can beconsidered the trace 500. In some implementations, measurements within ascan or from multiple scans can be averaged or filtered, e.g., a runningaverage can be calculated, to generate the measurements 510 of the trace500.

The sequence of measured values can be used to determine an endpoint ora change to the polishing parameters, e.g., to reduce within-wafernonuniformity. For example, a function 520 (of measured value versustime) can be fit to the measured values 510. The function 520 can be apolynomial function, e.g., a linear function. An endpoint 540 can bepredicted based on a calculated time at which the linear function 520reaches a target value 530.

As stated above, due to assembly variations and changes over time ofenvironmental or system parameters, the eddy current monitoring systemmay need calibration. The eddy current monitoring system may becalibrated when the sensor is initially installed on a chemicalmechanical polishing station 22. The eddy current monitoring system mayautomatically be calibrated each time a substrate is loaded forpolishing and/or may be calibrated during polishing.

The signal from the eddy current sensor can be affected by drift ofenvironmental parameters, e.g., temperature of the eddy current sensoritself. Drift compensation, e.g., as described in U.S. Pat. No.7,016,795, can be performed, to compensate for some changes. However,this drift compensation technique might not address various sources ofchange to the signal, and might not meet increasingly stringent processdemands.

A measurement of the substrate from an in-line or stand-alone metrologystation can be used in conjunction of measurements from the in-situ eddycurrent sensor to calibrate a gain of the eddy current monitoringsystem. For example, a desired starting signal from the in-situ eddycurrent sensor can determined based on the measurement from themetrology station and a calibration curve. An adjustment for the gaincan then be calculated based on a comparison of the expected startingsignal to the actual starting signal from the in-situ eddy currentsensor.

In some implementations, the calibrations can be performed usingequation (1) to correct the gain. In equation (1), N is a correctionfactor for correcting the gain. D is the desired eddy current signal fora measured conductive layer thickness. S is the starting measured value,i.e., the measured eddy current signal at the beginning of polishing,and K is a constant representing a desired value at an off-waferlocation. K can be set to a default value.

N=(D−K)/(S−K)  (1)

A new gain G′ can be calculated based on an old gain G and thecorrection factor, e.g., G′=G*N.

In some implementations, the correction factor calculated from thevalues for S and D from one substrate is used to adjust the gain for thein-situ monitoring system for that substrate. For example, thecalibration can be represented as G_(n)=G_(n−1)*N_(n), where G_(n) isthe gain used for adjusting the n^(th) substrate, G_(n−1) is the gainused for adjusting the (n−1)^(th) substrate, and N_(n) is the correctionfactor calculated from the values for S and D determined from data fromthe n^(th) substrate.

In some implementations, the correction factor calculated from thevalues for S and D from one substrate is used to adjust the gain for thein-situ monitoring system for a subsequent substrate. For example, thecalibration can be represented as G_(n+1)=G_(n−1)*N_(n), where G_(n+1)is the gain used for adjusting the (n+1)^(th) substrate, G_(n−1) is thegain used for adjusting the (n−1)^(th) substrate, and N_(n) is thecorrection factor calculated from the values for S and D determined fromdata from the n^(th) substrate.

In some implementations, the desired eddy current signal D may becalculated based on a pre-established (i.e., prior to polishing of thesubstrate) calibration curve relating thickness to eddy current signal.FIG. 4 illustrates an example of a calibration curve 410. In someimplementations, the calibration curve is based on eddy current signalvalues collected from a “golden” polishing station. As a result, ideallyall polishing stations would generate the same eddy current signal forthe same conductive layer thickness.

FIG. 6 shows a process 600 for controlling substrate polishing, forexample, chemical mechanical polishing. A measurement zone is selectedon a substrate (610). The zone can be a radial range of the substrate.For example, a radial range that is empirically determined based onprior measurements to have low axial asymmetry can be selected. Forexample, the zone can be a radial range that excludes both the centerand edge of the substrate. For example, the zone can be a radial rangefrom 20 to 40 mm from the center of the substrate. In someimplementations the zone can be selected by a user, e.g., based on inputinto a graphical user interface.

Prior to polishing, the thickness of an outer conductive layer ismeasured in the selected zone (620). The outer conductive layer can be ametal layer, such as copper. The measured thickness is stored as theinitial conductive layer thickness. This thickness measurement is notperformed by the in-situ monitoring system. Rather, the thicknessmeasurement may be performed by an in-line or a stand-alone metrologysystem suitable for measuring conductive layer thickness, such as aneddy current metrology system, e.g., the iMap™ radial scan systemavailable from Applied Materials.

The substrate is loaded to a polishing station that includes an eddycurrent monitoring system (630). Loading of the substrate to thepolishing station may occur after the thickness of the initialconductive layer is measured. As an example, the substrate may be loadedto the polishing station 22 having an in-situ monitoring system 40.

The substrate is polished and a “raw” eddy current signal from theselected zone of the substrate is received (640). As an example, the raweddy current signal may be received by the computer 90 of the polishingstation 22. As described above, the computer 90 may receive the raw eddycurrent signal for the entire substrate, and the received signal may besampled, the position on the substrate for each sampled measurement maybe determined, and the sampled measurements may be sorted into aplurality of zones including the selected zone. As noted with respect toFIG. 3, the computer 90 may also receive the raw eddy current signalfrom off-wafer locations, e.g., when the eddy current sensor is notunder the substrate.

The received eddy current data is adjusted by a previously calculatedgain and offset (650). For example, an adjusted signal value V′ can becalculated from the raw signal value V based on V′=V*G+K.

In some implementations, for the n^(th) substrate, the gain iscalculated based on data from polishing a preceding (n−1)^(th)substrate. For example,

V′ _(n) =V _(n) *G _(n−1) +K and G _(n−1) =G _(n−2) *N _(n−1)

where V′_(n) is the adjusted signal value for the n^(th) substrate,V_(n) is the raw signal value for the n^(th) substrate, G_(n−1) is thegain used for adjusting the (n−1)^(th) substrate, G_(n−2) is the gainused for adjusting the (n−2)^(th) substrate, and N_(n−1) is thecorrection factor calculated from the values for S and D determined fromdata from the (n−1)^(th) substrate.

Gain and offset calculations for calibrating the eddy currentmeasurement sensor are described in details with respect to step (670)below.

In some implementations, when polishing a first substrate, for example,the first substrate in a batch or the first substrate after a polishingpad has been replaced, so that prior data is unreliable or unavailable,the gain is simply set as at a default value G_(o), so that

V′ ₁ =V ₁ *G ₀ +K.

A new gain (or an adjustment for the gain) is calculated based on thereceived eddy current data and the previously measured initialconductive layer thickness (660). As an example the gain calculationscan be performed by the computer 90 of the polishing station 22. Forexample, a correction factor N for the gain can be calculated accordingto

N=(D−K)/(S−K).

The initial thickness IT of the conductive layer in the selected zonewas measured in step 620. The desired value D corresponding to theinitial thickness IT can be calculated from the calibration curve 410(see FIG. 4).

The starting measured value S can be determined from the eddy currentdata. That is, the eddy current data received during an initial periodof polishing should correspond to the initial thickness. For example,once sufficient data has been collected during polishing, a function canbe fit to the sequence of adjusted values. The function can be apolynomial function, e.g., a linear function.

A value S at an initial time T0 can be calculated from the fittedfunction (see FIG. 5). The time T0 is not necessarily the exact starttime for the polishing operation, e.g., the time that the substrate islowered into contact with the polishing pad, but could be severalseconds, e.g., 2 or 3 seconds, thereafter. Without being limited to anyparticular theory, using the time that the substrate is lowered intocontact with the polishing pad can give an artificially high signalvalue since the polishing rate can initially be limited, e.g., due tothe fact that the platen is still ramping up to the target rotationrate.

K can be a default value. K can correspond to the value of thecalibration curve 410 for zero thickness of the layer. If driftcompensation is performed, e.g., as described in U.S. Pat. No.7,016,795, then the drift compensation can automatically adjust theoff-wafer signal back to K at each scan.

A new gain G′ can then be calculated from an old gain G as G′=G*N. Insome implementations, the new gain is used for a subsequent substrate(i.e., the substrate after the one used to generate the values for S andD). In this case, the gain to be used for the (n+1)^(th) substrate canbe expressed as G_(n+1)=G_(n−1)*N_(n).

In some implementations, after sufficient data is accumulated todetermine the starting value S for a current substrate, the new gain iscalculated and a net set of data is calculated for the current substrateusing the new gain. In this case, the gain to be used for the n^(th)substrate can be expressed as G_(n)=G_(n−1)*N_(n).

For example, the new gain can be used for the current substrate whenpolishing a first substrate, for example, the first substrate in a batchor the first substrate after a polishing pad has been replaced. For thelater polished substrates, the new gain can be used for the subsequentsubstrate.

In some implementations, the sequence of gain values is filtered, e.g.,to dampen wafer-to-wafer noise such that gain changes more smoothly, togenerate a filtered gain value for a given substrate. This filtered gainvalue can then be used in place of G in the equations above. Forexample, the gain can be subject to a recursive notch filter.

In either implementation, the adjusted data is used to determine apolishing endpoint or modify the polishing parameters (670). Theadjusted data can represent the thickness of the conductive layer beingpolished and may be used to trigger a change in polishing parameters. Anexample of finding a polishing endpoint is described above withreference to FIG. 5.

In some implementations, one or more measurement zones may be selectedand the thickness of more than one zone may be used for calibrating theeddy current sensor. In some implementations, the measurement of theinitial thickness is performed at one point of the selected zone. Insome implementations, the measurement is performed at two or more pointsof the selected zone and the measured data are averaged.

The resistivity of the conductive layer may change as the temperature ofthe conductive layer changes. The induced eddy currents and thereforethe measured eddy current signals depend on the resistivity of theconductive layer. Polishing a substrate increases the substratetemperature and reduces the induced eddy current signals.

If a substrate is moved from a first in-situ polishing station to asecond in-situ polishing station to continue polishing, both polishingstations using eddy current monitory, the temperature variations betweenthe two polishing stations affects the eddy current signals. Temperaturecompensation can be performed as below:

P _(post) −P _(ini)[1+alpha(TE _(post) −TE _(ini))]  (2)

T _(ini) =T _(post) [P _(post) /P _(ini)]  (3)

In the above equations (2) and (3), P_(post) is the resistivity factorof the layer at the second polishing station and P_(ini) is theresistivity factor of the same layer at the first polishing station.TE_(post) is the temperature at the second polishing station andTE_(ini) is the temperature at the first polishing station. Theparameter alpha can be calculated empirically and is a value very closeto zero, e.g, 0.002 to 0.005, e.g., 0.0032. The parameter alpha candepend on the composition of the layer being polished. In someimplementations, the parameter alpha can be selected by user input,e.g., the user can select from a menu listing layer compositions, andthe parameter alpha corresponding to the selected layer composition isdetermined from a look-up table. Equation (5) can be used for thicknesscorrection between two polishing stations having different temperatures.

FIG. 7 shows a process 700 for controlling polishing when transferring asubstrate from a first polishing station to a second polishing station.A measurement zone is selected on a substrate (710). As noted above, thezone can be a radial range of the substrate. For example, a radial rangethat is empirically determined based on prior measurements to have lowaxial asymmetry can be selected. In some implementations the zone can beselected by a user, e.g., based on input into a graphical userinterface.

The substrate is polished at a first polishing station and a “raw” eddycurrent raw signal from the selected zone of the substrate is received(720). As an example, the eddy current signal may be received by thecomputer 90 of the polishing station 22. As described above, thecomputer 90 may receive the eddy current signal of the entire substrateand the sampled measurements can be sorted into different zones,including the selected zone.

The received eddy current data of the selected zone of the firstpolishing station is adjusted by a first gain and offset (730). Gain andoffset can be received from a preceding substrate measurement or may becalculated from the eddy current data of the current substrate beingpolished as described in details with respect to step (670) above. Afirst function can be fit to the eddy current data collected at thefirst polishing station. The first function can be a first polynomialfunction, e.g., a first linear function. In some implementations, for ashort period of time (e.g., 10 seconds) after polishing begins the eddycurrent data may not be reliable and may be discarded.

A first temperature of the polishing process at the first polishingstation is determined (740). In some implementations, the firsttemperature is a temperature of the polishing pad. Alternatively or incombination, the temperature of the substrate being polished may bemeasured. Contacting sensors and/or non-contacting sensors (e.g.,infrared sensors) may be used to measure the temperature. Thetemperature can be measured periodically and/or around the timepolishing at the first polishing station is halted.

The substrate is transferred to a second polishing station and a secondtemperature of the process at the second polishing station is measured(750). In general, the temperature of the same element as the firstpolishing station can be measured. For example, if the first temperatureis a temperature of the polishing pad at the first polishing station,then the second temperature is a temperature of the polishing pad at thesecond polishing station. Similarly, if the first temperature is atemperature of the substrate at the first polishing station, then thesecond temperature is a temperature of the substrate at the secondpolishing station. The temperature can be measured periodically and/oraround the time polishing at the second polishing station begins.

Alternatively, rather than measure the second temperature at the secondpolishing station, the system can simply assume that the substrate is ata default temperature, e.g., room temperature, e.g., 21° C., whenpolishing begins at the second polishing station.

The substrate is polished at the second polishing station and a raw eddycurrent signal the selected zone of the substrate is received (760). Asan example, the eddy current signal may be received by the computer 90of the polishing station 22. As described above, the computer 90 mayreceive the eddy current raw data of the entire substrate and thesampled measurements can be sorted into different zones, including theselected zone. A second function can be fit to the eddy current datacollected at the second polishing station. The second function can be asecond polynomial function, e.g., a second linear function.

The received eddy current data for the second polishing station isadjusted by a second gain and offset (770). Gain and offset can bereceived from a preceding substrate measurement or may be calculatedfrom the eddy current data of the current wafer being polished asdescribed in details with respect to step (670) above. In someimplementations, as described in equations (2) and (3), the gain can beadjusted to incorporate the difference between the first and the secondtemperatures.

For example, when switching the substrate from a first polishing stationto a second polishing station, a correction factor N for the gain can becalculated according to

N=(D′−K)/(S′−K)

The starting measured value S′ at the second polishing station can bedetermined from the eddy current data collected at the second polishingstation. For example, once sufficient data has been collected duringpolishing at the second polishing station, the second function, e.g.,the second linear function, is fit to the sequence of adjusted values.The value S at an initial time T0 at the second polishing station can becalculated from the second fitted function. The time T0 is notnecessarily the exact start time for the polishing operation at thesecond polishing station, e.g., the time that the substrate is loweredinto contact with the polishing pad, but could be several seconds, e.g.,2 or 3 seconds, thereafter.

The final thickness T_(post) of the conductive layer in the selectedzone at the first polishing station can be determined. In someimplementations, the first function is used to calculate a final valueDF for the time TF at which polishing was actually stopped at the firstpolishing station. In some implementations, the final value DF is simplythe target value 530. The final thickness T_(post) corresponding to thefinal value DF can be calculated based on the calibration curve 410 (seeFIG. 4).

To perform temperature compensation, an adjusted initial thicknessT_(ini) for the second polishing station is calculated based on thefinal thickness T_(post) and the temperatures at the two polishingstations. For example, the adjusted initial thickness can be calculatedaccording to T_(ini)=T_(post)(P_(post)/P_(ini)). The desired value D'scorresponding to the adjusted initial thickness T_(ini) can then becalculated from the calibration curve 410 (see FIG. 4). Calculation ofthe gain can then proceed as discussed above.

The above described polishing apparatus and methods can be applied in avariety of polishing systems. Either the polishing pad, or the carrierheads, or both can move to provide relative motion between the polishingsurface and the substrate. For example, the platen may orbit rather thanrotate. The polishing pad can be a circular (or some other shape) padsecured to the platen. Some aspects of the endpoint detection system maybe applicable to linear polishing systems, e.g., where the polishing padis a continuous or a reel-to-reel belt that moves linearly. Thepolishing layer can be a standard (for example, polyurethane with orwithout fillers) polishing material, a soft material, or afixed-abrasive material. Terms of relative positioning are used; itshould be understood that the polishing surface and substrate can beheld in a vertical orientation or some other orientation.

Embodiments can be implemented as one or more computer program products,i.e., one or more computer programs tangibly embodied in anon-transitory machine readable storage media, for execution by, or tocontrol the operation of, data processing apparatus, e.g., aprogrammable processor, a computer, or multiple processors or computers.A number of embodiments of the invention have been described.Nevertheless, it will be understood that various modifications may bemade without departing from the spirit and scope of the invention. Forexample, more or fewer calibration parameters may be used. Additionally,calibration and/or drift compensation methods may be altered.Accordingly, other embodiments are within the scope of the followingclaims.

What is claimed is:
 1. A method of controlling polishing, comprising:polishing a substrate at a first polishing station; during polishing ofthe substrate at the first polishing station, monitoring the substratewith a first eddy current monitoring system to generate a first signal;determining an ending value of the first signal for an end of polishingof the substrate at the first polishing station; determining a firsttemperature at the first polishing station; after polishing thesubstrate at the first polishing station, polishing the substrate at asecond polishing station; during polishing of the substrate at thesecond polishing station, monitoring the substrate with a second eddycurrent monitoring system to generate a second signal; determining astarting value of the second signal for a start of polishing of thesubstrate at the second polishing station; determining a gain for thesecond polishing station based on the ending value, the starting valueand the first temperature; for at least a portion of the second signalcollected during polishing of at least one substrate at the secondpolishing station, calculating a third signal based on the second signaland the gain; and determining at least one of a polishing endpoint or anadjustment to a polishing parameter for the at least one substrate basedon the third signal.
 2. The method claim 1, wherein determining a gainfor the second polishing station further includes measuring a secondtemperature at the second polishing station.
 3. The method of claim 2,wherein the gain is calculated based on the resistivity of a layer beingpolished at first and second temperatures.
 4. The method of claim 3,comprising calculating [1+alpha(TE_(post)−TE_(ini))] where TE_(post) isthe first temperature at the first polishing pad, TE_(ini) is the secondtemperature at the second polishing pad, and alpha is a resistivityfactor for a material of layer being polished.
 5. The method of claim 3,comprising determining an ending value of the first signal for an end ofpolishing of the substrate at the first polishing station.
 6. The methodof claim 5, wherein determining the ending value comprises generating afirst sequence of measured values from the first signal, fitting a firstfunction to the first sequence of measured values, and calculating theending value as a value of the function at an endpoint time forpolishing at the first polishing station.
 7. The method of claim 5,comprising determining a first thickness from the ending value and acalibration function relating thickness to signal strength.
 8. Themethod of claim 7, comprising determining an adjusted thickness based onthe first thickness, the first temperature and the second temperature.9. The method of claim 8, wherein determining the adjusted thicknesscomprises multiplying the first thickness by[1+alpha(TE_(post)−TE_(ini))] where TE_(post) is the first temperatureat the first polishing pad, TE_(ini) is the second temperature at thesecond polishing pad, and alpha is a resistivity factor for a materialof layer being polished.
 10. The method of claim 8, comprisingdetermining a desired value from the adjusted value and the calibrationfunction.
 11. The method of claim 10, comprising determining a startingvalue of the second signal for a start of polishing of the substrate atthe second polishing station.
 12. The method of claim 11, whereindetermining the starting value comprises generating a second sequence ofmeasured values from the second signal, fitting a second function to thesecond sequence of measured values, and calculating the starting valueas a value of the second function at an approximate start time ofpolishing at the second polishing station.
 13. The computer programproduct of claim 11, wherein determining the gain comprises calculatinga multiplier N according to$N = \frac{\left( {D - K} \right)}{\left( {S - K} \right)}$ where D isthe desired value, S is the starting value, and K is a constantrepresenting a value of the calibration function for zero thickness. 14.The method of claim 1, wherein the first temperature is a temperature ofa first polishing pad at the first polishing station and the secondtemperature is a temperature of the second polishing pad at a secondpolishing station.
 15. The method of claim 1, wherein the firsttemperature is a temperature of a layer being polished at the firstpolishing station and the second temperature is a temperature of thelayer being polished at the second polishing station.
 16. A computerprogram product, tangibly encoded on a non-transitory computer readablemedia, operable to cause a data processing apparatus to performoperations comprising: causing a first polishing station to polish asubstrate; receiving a first signal from a first eddy current monitoringsystem during polishing of the substrate at the first polishing station;determining an ending value of the first signal for an end of polishingof the substrate at the first polishing station; determining a firsttemperature at the first polishing station; after polishing thesubstrate at the first polishing station, causing a second polishingstation to polish the substrate; receiving a second signal from a secondeddy current monitoring system during polishing of the substrate at thesecond polishing station; determining a starting value of the secondsignal for a start of polishing of the substrate at the second polishingstation; determining a gain for the second polishing station based onthe ending value, the starting value and the first temperature; for atleast a portion of the second signal collected during polishing of atleast one substrate at the second polishing station, calculating a thirdsignal based on the second signal and the gain; and determining at leastone of a polishing endpoint or an adjustment to a polishing parameterfor the at least one substrate based on the third signal.
 17. Thecomputer program product of claim 16, wherein determining a gain for thesecond polishing station further includes measuring a second temperatureat the second polishing station.
 18. The computer program product ofclaim 17, wherein the gain is calculated based on the resistivity of alayer being polished at first and second temperatures.
 19. A polishingsystem, comprising: a first polishing station including a first platento support a first polishing pad, a first in-situ eddy currentmonitoring system including a first sensor to generate a first signaldepending on a thickness of a conductive layer on a substrate, and afirst temperature sensor; a second polishing station including a secondplaten to support a second polishing pad and a second in-situ eddycurrent monitoring system including a second sensor to generate a secondsignal depending on the thickness of the conductive layer on thesubstrate; a carrier head to hold the substrate; and a controllerconfigured to perform operations comprising receiving a second signalfrom a second eddy current monitoring system during polishing of thesubstrate at the second polishing station; determining a starting valueof the second signal for a start of polishing of the substrate at thesecond polishing station; determining a gain for the second polishingstation based on the ending value, the starting value and a firsttemperature measured by the first temperature sensor; for at least aportion of the second signal collected during polishing of at least onesubstrate at the second polishing station, calculating a third signalbased on the second signal and the gain; and determining at least one ofa polishing endpoint or an adjustment to a polishing parameter for theat least one substrate based on the third signal.
 20. The system ofclaim 19, comprising a second temperature sensor and wherein thecontroller is configured to determine the gain based on a secondtemperature measured by the second temperature sensor.
 21. The system ofclaim 19, wherein the controller is configured to calculate the gainbased on the resistivity of a layer being polished.